藤原宏平 Kohei Fujiwara
研究分野や研究の興味 酸化物エレクトロニクス、薄膜新材料、スピントロニクス、薄膜合成、固体化学、トポロジカル物質、アモルファス薄膜
researchmap
科研費データベース
2003年3月 東京大学理学部化学科 卒業
2008年3月 東京大学大学院新領域創成科学研究科 物質系専攻 修了 博士(科学)
2008年4月 理化学研究所 基礎科学特別研究員
2011年2月 大阪大学産業科学研究所 助教
2015年4月 東北大学金属材料研究所 講師
2018年10月 東北大学金属材料研究所 准教授
2023年4月 科学技術振興機構 創発研究者
Berry curvature contributions of kagome-lattice fragments in amorphous Fe–Sn thin films
K. Fujiwara, Y. Kato, H. Abe, S. Noguchi, J, Shiogai, Y. Niwa, H. Kumigashira, Y. Motome, and A. Tsukazaki
Nature Communications 14, 3399 (2023).
国際出願 PCT/JP2022/038027
Electrochemical thinning of Co kagome-lattice layers in ferromagnetic Co3Sn2S2 thin films by bias-induced Co dissolution [Featured Article]
K. Fujiwara, J, Ikeda, S. Ito, and A. Tsukazaki
Journal of Applied Physics 133, 125302 (2023).
トポロジカル物質を用いた薄膜磁気センサ
藤原 宏平, 塩貝 純一, 塚﨑 敦
応用物理 92, 20 (2023).
Thin-film magnetic sensors using topological materials
K. Fujiwara, J. Shiogai, and A. Tsukazaki
JSAP Review 2023, 230414 (2023).
Crystalline order L21 ordering of Co2FeSn thin films promoted by high-temperature annealing
K. Fujiwara, K. Shibata, S. Nishimura, J. Shiogai, and A. Tsukazaki
AIP Advances 12, 065030 (2022).
特願 2022-058190
Tuning scalar spin chirality in ultrathin films of the kagome-lattice ferromagnet Fe3Sn
K. Fujiwara, Y. Kato, T. Seki, K. Nomura, K. Takanashi, Y. Motome, and A. Tsukazaki
Communications Materials 2, 113 (2021).
Two-dimensionality of metallic surface conduction in Co3Sn2S2 thin films
J. Ikeda, K. Fujiwara, J. Shiogai, T. Seki, K. Nomura, K. Takanashi, and A. Tsukazaki
Communications Physics 4, 117 (2021).
Critical thickness for the emergence of Weyl features in Co3Sn2S2 thin films
Communications Materials 2, 18 (2021).
Stabilization of a honeycomb lattice of IrO6 octahedra by formation of ilmenite-type superlattices in MnTiO3
K. Miura, K. Fujiwara, K. Nakayama, R. Ishikawa, N. Shibata, and A. Tsukazaki
Communications Materials 1, 55 (2020).
Insulator-to-Metal Transition of Cr2O3 Thin Films via Isovalent Ru3+ Substitution
K. Fujiwara, M. Kitamura, D. Shiga, Y. Niwa, K. Horiba, T. Nojima, H. Ohta, H. Kumigashira, and A. Tsukazaki
Chemistry of Materials 32, 5272 (2020).
Electrical detection of the antiferromagnetic transition in MnTiO3 ultrathin films by spin Hall magnetoresistance
K. Miura, K. Fujiwara, J. Shiogai, T. Nojima, and A. Tsukazaki
Journal of Applied Physics 127, 103903 (2020).
Doping-induced enhancement of anomalous Hall coefficient in Fe-Sn nanocrystalline films for highly sensitive Hall sensors
K. Fujiwara, Y. Satake, J. Shiogai, and A. Tsukazaki
APL Materials 7, 111103 (2019).
Ferromagnetic Co3Sn2S2 thin films fabricated by co-sputtering
K. Fujiwara, J. Ikeda, J. Shiogai, T. Seki, K. Takanashi, and A. Tsukazaki
Japanese Journal of Applied Physics 58, 050912 (2019).
Growth control of corundum-derivative MnSnO3 thin films by pulsed-laser deposition
K. Miura, K. Fujiwara, and A. Tsukazaki
AIP Advances 9, 035210 (2019).
Fe-Sn nanocrystalline films for flexible magnetic sensors with high thermal stability
Y. Satake, K. Fujiwara, J. Shiogai, T. Seki, and A. Tsukazaki
Scientific Reports 9, 3282 (2019).
特願 2018-157542, US特許 11,543,468 B2
Formation of distorted rutile-type NbO2, MoO2, and WO2 films by reactive sputtering
K. Fujiwara and A. Tsukazaki
Journal of Applied Physics 125, 085301 (2019).
Thin-film stabilization of LiNbO3-type ZnSnO3 and MgSnO3 by molecular-beam epitaxy
K. Fujiwara, H. Minato, J. Shiogai, A. Kumamoto, N. Shibata, and A. Tsukazaki
APL Materials 7, 022505 (2019).
High-mobility field-effect transistor based on crystalline ZnSnO3 thin films
H. Minato, K. Fujiwara, and A. Tsukazaki
AIP Advances 8, 055327 (2018).
Fabrication of tetragonal FeSe – FeS alloy films with high sulfur contents by alternate deposition
Japanese Journal of Applied Physics 56, 100308 (2017).
Enhanced electron mobility at the two-dimensional metallic surface of BaSnO3 electric-double-layer transistor at low temperatures
K. Fujiwara, K. Nishihara, J. Shiogai, and A. Tsukazaki
Applied Physics Letters 110, 203503 (2017).
High field-effect mobility at the (Sr,Ba)SnO3/BaSnO3 interface
AIP Advances 6, 085014 (2016).
電気二重層トランジスタ構造を用いた酸化物の物性制御Advanced Materials Interfaces 1, 1300108 (2014).Scientific Reports 4, 5818 (2014).Award for Encouragement of Research in IUMRS-ICA 2014
5d遷移金属酸化物における逆スピンホール効果の観測Nature Communications 4, 2893 (2013).
抵抗変化メモリの局所相変化メカニズム解明
Japanese Journal of Applied Physics 47, 6266 (2008).Applied Physics Letters 95, 012110 (2008).Applied Physics Letters 103, 193114 (2013).第32回応用物理学会論文奨励賞第34回応用物理学会講演奨励賞
物理と化学が複雑に絡み合った新しい分野で、皆さんの柔軟な発想を試してみませんか。